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IRFS7434PBF

Manufacturer: Infineon Technologies
REK ID: 135131

Technical Information

Manufacturer Infineon Technologies 
Series HEXFET®, StrongIRFET™ 
Packaging Tube  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 
Vgs(th) (Max) @ Id 3.9V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 324nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 10820pF @ 25V 
FET Feature 
Power Dissipation (Max) 294W (Tc) 
Rds On (Max) @ Id, Vgs 1.6 mOhm @ 100A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package D2PAK 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 40V 195A D2PAK - N-Channel 40V 195A (Tc) 294W (Tc) Surface Mount D2PAK

Transistors IRFS7434PBF

Datasheet IRFS7434PBF (PDF)

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Available: 6 psc.
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IRFS7434PBF
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