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IRFR4510PBF

Manufacturer: Infineon Technologies
REK ID: 133865

Technical Information

Manufacturer Infineon Technologies 
Series HEXFET® 
Packaging Tube  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 100µA 
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 3031pF @ 50V 
FET Feature 
Power Dissipation (Max) 143W (Tc) 
Rds On (Max) @ Id, Vgs 13.9 mOhm @ 38A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package D-Pak 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N CH 100V 56A DPAK - N-Channel 100V 56A (Tc) 143W (Tc) Surface Mount D-Pak

Transistors IRFR4510PBF

Datasheet IRFR4510PBF (PDF)

Price (check the terms and price with the managers)
Available: 2 psc.
Price available upon request
IRFR4510PBF
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