| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5860pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Rds On (Max) @ Id, Vgs | 33 mOhm @ 35A, 10V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
MOSFET N-CH 250V 57A TO247AC - N-Channel 250V 57A (Tc) 360W (Tc) Through Hole TO-247AC
Transistors IRFP4332-203PBF
The manager will inform you of the total cost including delivery.