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IRFHS9301TR2PBF

Manufacturer: Infineon Technologies
REK ID: 132436

Technical Information

Manufacturer Infineon Technologies 
Series HEXFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 13A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.4V @ 25µA 
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 25V 
FET Feature 
Power Dissipation (Max) 2.1W (Ta) 
Rds On (Max) @ Id, Vgs 37 mOhm @ 7.8A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-PQFN (2x2) 
Package / Case 6-PowerVDFN 

Description

MOSFET P-CH 30V 6A PQFN - P-Channel 30V 6A (Ta), 13A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)

Transistors IRFHS9301TR2PBF

Datasheet IRFHS9301TR2PBF (PDF)

Price (check the terms and price with the managers)
Available: 14 psc.
Price available upon request
IRFHS9301TR2PBF
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