| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 653pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 8.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-PQFN (2x2) |
| Package / Case | 6-PowerVDFN |
MOSFET N-CH 25V 9.9A PQFN - N-Channel 25V 9.9A (Ta), 21A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
Transistors IRFHS8242TR2PBF
The manager will inform you of the total cost including delivery.