| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 20V |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1543pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 11A, 20V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (3x3) |
| Package / Case | 8-PowerTDFN |
MOSFET P-CH 30V 11A 3X3 PQFN - P-Channel 30V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3)
Transistors IRFHM9331TR2PBF
The manager will inform you of the total cost including delivery.