Manufacturer | Infineon Technologies |
Series | HEXFET® |
Packaging | Cut Tape (CT) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta) |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 24A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) |
Package / Case | 8-PowerVDFN |
MOSFET N-CH 30V 24A 5X6 PQFN - N-Channel 30V 24A (Ta), 76A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)
Transistors IRFH7934TR2PBF
The manager will inform you of the total cost including delivery.