Manufacturer | Infineon Technologies |
Series | FASTIRFET™, HEXFET® |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 128A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.6V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 3.9W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) |
Package / Case | 8-PowerTDFN |
MOSFET N-CH 100V 20A - N-Channel 100V 20A (Ta), 128A (Tc) 3.9W (Ta), 156W (Tc) Surface Mount PQFN (5x6)
Transistors IRFH7184TRPBF
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