| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 35A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-TQFN Exposed Pad |
MOSFET N CH 100V 11A PQFN5X6 - N-Channel 100V 11A (Ta), 58A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Transistors IRFH7110TR2PBF
The manager will inform you of the total cost including delivery.