| Manufacturer | Infineon Technologies |
| Series | HEXFET®, StrongIRFET™ |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 194nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6419pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-VQFN Exposed Pad |
MOSFET N CH 40V 100A PQFN5X6 - N-Channel 40V 100A (Tc) 156W (Tc) Surface Mount 8-PQFN (5x6)
Transistors IRFH7004TR2PBF
The manager will inform you of the total cost including delivery.