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IRFH5006TR2PBF

Manufacturer: Infineon Technologies
REK ID: 131915

Technical Information

Manufacturer Infineon Technologies 
Series HEXFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 100A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 150µA 
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4175pF @ 30V 
FET Feature 
Power Dissipation (Max) 3.6W (Ta), 156W (Tc) 
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 50A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PQFN (5x6) 
Package / Case 8-PowerVDFN 

Description

MOSFET N-CH 60V 100A 5X6 PQFN - N-Channel 60V 21A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount PQFN (5x6)

Transistors IRFH5006TR2PBF

Datasheet IRFH5006TR2PBF (PDF)

Price (check the terms and price with the managers)
Available: 10 psc.
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IRFH5006TR2PBF
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