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IRFH4213DTRPBF

Manufacturer: Infineon Technologies
REK ID: 134443

Technical Information

Manufacturer Infineon Technologies 
Series HEXFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 25V 
Current - Continuous Drain (Id) @ 25°C 40A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.1V @ 100µA 
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 3520pF @ 13V 
FET Feature 
Power Dissipation (Max) 3.6W (Ta), 96W (Tc) 
Rds On (Max) @ Id, Vgs 1.35 mOhm @ 50A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PQFN (5x6) 
Package / Case 8-PowerTDFN 

Description

MOSFET N-CH 25V 40A 8PQFN - N-Channel 25V 40A (Ta) 3.6W (Ta), 96W (Tc) Surface Mount PQFN (5x6)

Transistors IRFH4213DTRPBF

Datasheet IRFH4213DTRPBF (PDF)

Price (check the terms and price with the managers)
Available: 3 psc.
Price available upon request
IRFH4213DTRPBF
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