Manufacturer | Infineon Technologies |
Series | HEXFET®, StrongIRFET™ |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7330pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 2 mOhm @ 100A, 10V |
Operating Temperature | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
MOSFET N CH 40V 195A TO220AB - N-Channel 40V 195A (Tc) Through Hole TO-220AB
Transistors IRFB7437GPBF
The manager will inform you of the total cost including delivery.