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IRF8788PBF

Manufacturer: Infineon Technologies
REK ID: 131981

Technical Information

Manufacturer Infineon Technologies 
Series HEXFET® 
Packaging Tube  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 24A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.35V @ 100µA 
Gate Charge (Qg) (Max) @ Vgs 66nC @ 4.5V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 5720pF @ 15V 
FET Feature 
Power Dissipation (Max) 2.5W (Ta) 
Rds On (Max) @ Id, Vgs 2.8 mOhm @ 24A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 30V 24A 8-SO - N-Channel 30V 24A (Ta) 2.5W (Ta) Surface Mount 8-SO

Transistors IRF8788PBF

Datasheet IRF8788PBF (PDF)

Price (check the terms and price with the managers)
Available: 12 psc.
Price available upon request
IRF8788PBF
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