| Manufacturer | Infineon Technologies |
| Series | FETKY™ |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 15V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 1.2A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-uSMD |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
MOSFET P-CH 20V 1.7A MICRO8 - P-Channel 20V 1.7A (Ta) 1.25W (Ta) Surface Mount 8-uSMD
Transistors IRF7524D1GTRPBF
The manager will inform you of the total cost including delivery.