Manufacturer | Infineon Technologies |
Series | HEXFET® |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 197A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6560pF @ 13V |
FET Feature | Schottky Diode (Body) |
Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 37A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MX |
Package / Case | DirectFET™ Isometric MX |
MOSFET N-CH 25V 37A DIRECTFET-MX - N-Channel 25V 37A (Ta), 197A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX
Transistors IRF6798MTRPBF
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