| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 5.7A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ SJ |
| Package / Case | DirectFET™ Isometric SJ |
MOSFET N-CH 100V DIRECTFET-SJ - N-Channel 100V 5.7A (Ta), 25A (Tc) 3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ
Transistors IRF6645
The manager will inform you of the total cost including delivery.