| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250mA |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 35A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
MOSFET N-CH 100V 59A TO-220AB - N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-220AB
Transistors IRF3710ZGPBF
The manager will inform you of the total cost including delivery.