| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 21A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
MOSFET N-CH 30V 59A D2PAK - N-Channel 30V 59A (Tc) 57W (Tc) Surface Mount D2PAK
Transistors IRF3707ZCSTRRP
The manager will inform you of the total cost including delivery.