| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
MOSFET N-CH 20V 4.2A 8SOIC - N-Channel 20V 4.2A (Ta) Surface Mount 8-SO
Transistors IRF1902GPBF
The manager will inform you of the total cost including delivery.