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IPU60R1K5CEBKMA1

Manufacturer: Infineon Technologies
REK ID: 135391

Technical Information

Manufacturer Infineon Technologies 
Series CoolMOS™ CE 
Packaging Tube  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 3.5V @ 90µA 
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V 
FET Feature 
Power Dissipation (Max) 28W (Tc) 
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.1A, 10V 
Operating Temperature -40°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-251 
Package / Case TO-251-3 Short Leads, IPak, TO-251AA 

Description

MOSFET N-CH 600V TO-251-3 - N-Channel 600V 3.1A (Tc) 28W (Tc) Through Hole TO-251

Transistors IPU60R1K5CEBKMA1

Datasheet IPU60R1K5CEBKMA1 (PDF)

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IPU60R1K5CEBKMA1
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