| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Stub Leads, IPak |
MOSFET N-CH 30V 90A TO251-3 - N-Channel 30V 90A (Tc) 79W (Tc) Through Hole PG-TO251-3
Transistors IPS040N03LGAKMA1
The manager will inform you of the total cost including delivery.