Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 15750pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 188W (Tc) |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
MOSFET N-CH 60V 120A PG-TO220-3 - N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-TO220-3-1
Transistors IPP120N06S402AKSA2
The manager will inform you of the total cost including delivery.