Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7180pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 115W (Tc) |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
MOSFET N-CH 40V 100A TO220-3-1 - N-Channel 40V 100A (Tc) 115W (Tc) Through Hole PG-TO220-3-1
Transistors IPP100N04S4H2AKSA1
The manager will inform you of the total cost including delivery.