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IPP075N15N3GHKSA1

Manufacturer: Infineon Technologies
REK ID: 135525

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 150V 
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 
Vgs(th) (Max) @ Id 4V @ 270µA 
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 5470pF @ 75V 
FET Feature 
Power Dissipation (Max) 300W (Tc) 
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 100A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package PG-TO-220-3 
Package / Case TO-220-3 

Description

MOSFET N-CH 150V 100A TO220-3 - N-Channel 150V 100A (Tc) 300W (Tc) Through Hole PG-TO-220-3

Transistors IPP075N15N3GHKSA1

Datasheet IPP075N15N3GHKSA1 (PDF)

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IPP075N15N3GHKSA1
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