Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 615pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Rds On (Max) @ Id, Vgs | 725 mOhm @ 2.1A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Thin-Pak (8x8) |
Package / Case | 4-PowerTSFN |
MOSFET N-CH 4VSON - N-Channel 650V 5.8A (Tc) 62.5W (Tc) Surface Mount Thin-Pak (8x8)
Transistors IPL65R725CFDAUMA1
The manager will inform you of the total cost including delivery.