| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 3 |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4910pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
MOSFET N-CH 100V 80A TO262-3 - N-Channel 100V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3
Transistors IPI072N10N3GXK
The manager will inform you of the total cost including delivery.