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IPD80R1K0CEBTMA1

Manufacturer: Infineon Technologies
REK ID: 135142

Technical Information

Manufacturer Infineon Technologies 
Series CoolMOS™ 
Packaging Cut Tape (CT)  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 800V 
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 3.9V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V 
FET Feature 
Power Dissipation (Max) 83W (Tc) 
Rds On (Max) @ Id, Vgs 950 mOhm @ 3.6A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 800V 5.7A TO252-3 - N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount TO-252-3

Transistors IPD80R1K0CEBTMA1

Datasheet IPD80R1K0CEBTMA1 (PDF)

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IPD80R1K0CEBTMA1
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