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IPD60R650CEBTMA1

Manufacturer: Infineon Technologies
REK ID: 135599

Technical Information

Manufacturer Infineon Technologies 
Series CoolMOS™ CE 
Packaging Tape & Reel (TR)  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 3.5V @ 200µA 
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V 
FET Feature 
Power Dissipation (Max) 82W (Tc) 
Rds On (Max) @ Id, Vgs 650 mOhm @ 2.4A, 10V 
Operating Temperature -40°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 600V 7A TO252 - N-Channel 600V 7A (Tc) 82W (Tc) Surface Mount PG-TO252-3

Transistors IPD60R650CEBTMA1

Datasheet IPD60R650CEBTMA1 (PDF)

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Available: 12 psc.
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IPD60R650CEBTMA1
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