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IPD60R380E6ATMA2

Manufacturer: Infineon Technologies
REK ID: 135839

Technical Information

Manufacturer Infineon Technologies 
Series CoolMOS™ 
Packaging Bulk  
Part Status Last Time Buy 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 3.5V @ 300µA 
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V 
FET Feature Super Junction 
Power Dissipation (Max) 83W (Tc) 
Rds On (Max) @ Id, Vgs 380 mOhm @ 3.8A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET NCH 600V 10.6A TO252 - N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3

Transistors IPD60R380E6ATMA2

Datasheet IPD60R380E6ATMA2 (PDF)

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IPD60R380E6ATMA2
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