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IPD50R650CEBTMA1

Manufacturer: Infineon Technologies
REK ID: 134126

Technical Information

Manufacturer Infineon Technologies 
Series CoolMOS™ 
Packaging Cut Tape (CT)  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 500V 
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 13V 
Vgs(th) (Max) @ Id 3.5V @ 150µA 
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V 
FET Feature 
Power Dissipation (Max) 47W (Tc) 
Rds On (Max) @ Id, Vgs 650 mOhm @ 1.8A, 13V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N CH 500V 6.1A PG-TO252 - N-Channel 500V 6.1A (Tc) 47W (Tc) Surface Mount PG-TO252-3

Transistors IPD50R650CEBTMA1

Datasheet IPD50R650CEBTMA1 (PDF)

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Available: 12 psc.
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IPD50R650CEBTMA1
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