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IPD50N06S4L12ATMA1

Manufacturer: Infineon Technologies
REK ID: 135779

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Digi-Reel®  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.2V @ 20µA 
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V 
Vgs (Max) ±16V 
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 25V 
FET Feature 
Power Dissipation (Max) 50W (Tc) 
Rds On (Max) @ Id, Vgs 12 mOhm @ 50A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 60V 50A TO252-3-11 - N-Channel 60V 50A (Tc) 50W (Tc) Surface Mount

Transistors IPD50N06S4L12ATMA1

Datasheet IPD50N06S4L12ATMA1 (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
IPD50N06S4L12ATMA1
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