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IPD25N06S4L30ATMA1

Manufacturer: Infineon Technologies
REK ID: 135490

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Digi-Reel®  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.2V @ 8µA 
Gate Charge (Qg) (Max) @ Vgs 16.3nC @ 10V 
Vgs (Max) ±16V 
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 25V 
FET Feature 
Power Dissipation (Max) 29W (Tc) 
Rds On (Max) @ Id, Vgs 30 mOhm @ 25A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3-11 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 60V 25A TO252-3 - N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11

Transistors IPD25N06S4L30ATMA1

Datasheet IPD25N06S4L30ATMA1 (PDF)

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Available: 13 psc.
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IPD25N06S4L30ATMA1
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