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IPD25CN10NGBUMA1

Manufacturer: Infineon Technologies
REK ID: 134238

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 39µA 
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 50V 
FET Feature 
Power Dissipation (Max) 71W (Tc) 
Rds On (Max) @ Id, Vgs 25 mOhm @ 35A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 100V 35A TO252-3 - N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3

Transistors IPD25CN10NGBUMA1

Datasheet IPD25CN10NGBUMA1 (PDF)

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IPD25CN10NGBUMA1
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