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IPD068P03L3GBTMA1

Manufacturer: Infineon Technologies
REK ID: 133737

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2V @ 150µA 
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 7720pF @ 15V 
FET Feature 
Power Dissipation (Max) 100W (Tc) 
Rds On (Max) @ Id, Vgs 6.8 mOhm @ 70A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET P-CH 30V 70A TO252-3 - P-Channel 30V 70A (Tc) 100W (Tc) Surface Mount PG-TO252-3

Transistors IPD068P03L3GBTMA1

Datasheet IPD068P03L3GBTMA1 (PDF)

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IPD068P03L3GBTMA1
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