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IPD035N06L3GATMA1

Manufacturer: Infineon Technologies
REK ID: 134230

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.2V @ 93µA 
Gate Charge (Qg) (Max) @ Vgs 79nC @ 4.5V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V 
FET Feature 
Power Dissipation (Max) 167W (Tc) 
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 90A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 60V 90A TO252-3 - N-Channel 60V 90A (Tc) 167W (Tc) Surface Mount PG-TO252-3

Transistors IPD035N06L3GATMA1

Datasheet IPD035N06L3GATMA1 (PDF)

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IPD035N06L3GATMA1
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