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IPB097N08N3 G

Manufacturer: Infineon Technologies
REK ID: 133715

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 80V 
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 
Vgs(th) (Max) @ Id 3.5V @ 46µA 
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V 
FET Feature 
Power Dissipation (Max) 100W (Tc) 
Rds On (Max) @ Id, Vgs 9.7 mOhm @ 46A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO263-2 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 80V 70A TO263-3 - N-Channel 80V 70A (Tc) 100W (Tc) Surface Mount PG-TO263-2

Transistors IPB097N08N3 G

Datasheet IPB097N08N3 G (PDF)

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IPB097N08N3 G
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