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IPB065N15N3GE8187ATMA1

Manufacturer: Infineon Technologies
REK ID: 133705

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 150V 
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 
Vgs(th) (Max) @ Id 4V @ 270µA 
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 75V 
FET Feature 
Power Dissipation (Max) 300W (Tc) 
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 100A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO263-7 
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB 

Description

MOSFET N-CH 150V 130A TO263-7 - N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Transistors IPB065N15N3GE8187ATMA1

Datasheet IPB065N15N3GE8187ATMA1 (PDF)

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IPB065N15N3GE8187ATMA1
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