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IPB049N06L3GATMA1

Manufacturer: Infineon Technologies
REK ID: 133699

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.2V @ 58µA 
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 30V 
FET Feature 
Power Dissipation (Max) 115W (Tc) 
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 80A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO263-2 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 60V 80A TO263-3 - N-Channel 60V 80A (Tc) 115W (Tc) Surface Mount PG-TO263-2

Transistors IPB049N06L3GATMA1

Datasheet IPB049N06L3GATMA1 (PDF)

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IPB049N06L3GATMA1
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