| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 58µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
MOSFET N-CH 60V 80A TO263-3 - N-Channel 60V 80A (Tc) 115W (Tc) Surface Mount PG-TO263-2
Transistors IPB049N06L3GATMA1
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