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IPB039N04LGATMA1

Manufacturer: Infineon Technologies
REK ID: 133693

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2V @ 45µA 
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V 
FET Feature 
Power Dissipation (Max) 94W (Tc) 
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 80A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO263-2 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 40V 80A TO263-3 - N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-2

Transistors IPB039N04LGATMA1

Datasheet IPB039N04LGATMA1 (PDF)

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Available: 13 psc.
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IPB039N04LGATMA1
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