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IPA50R190CE

Manufacturer: Infineon Technologies
REK ID: 134122

Technical Information

Manufacturer Infineon Technologies 
Series CoolMOS™ 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 500V 
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 13V 
Vgs(th) (Max) @ Id 3.5V @ 510µA 
Gate Charge (Qg) (Max) @ Vgs 47.2nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1137pF @ 100V 
FET Feature Super Junction 
Power Dissipation (Max) 32W (Tc) 
Rds On (Max) @ Id, Vgs 190 mOhm @ 6.2A, 13V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package PG-TO-220-FP 
Package / Case TO-220-3 Full Pack 

Description

MOSFET N-CH 500V 18.5A TO220FP - N-Channel 500V 18.5A (Tc) 32W (Tc) Through Hole PG-TO-220-FP

Transistors IPA50R190CE

Datasheet IPA50R190CE (PDF)

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Available: 4 psc.
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IPA50R190CE
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