| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Vgs(th) (Max) @ Id | - |
| Vgs (Max) | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8.5pF @ 3V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Rds On (Max) @ Id, Vgs | 12 Ohm @ 10mA, 2.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | USV |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
MOSFET N-CH 20V 0.1A USV - N-Channel 20V 100mA (Ta) 200mW (Ta) Surface Mount USV
Transistors HN4K03JUTE85LF
The manager will inform you of the total cost including delivery.