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HGTP7N60A4-F102

Manufacturer: ON Semiconductor
REK ID: 80493
1.66 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Part Status Active 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 34A 
Current - Collector Pulsed (Icm) 56A 
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A 
Power - Max 125W 
Switching Energy 55µJ (on), 150µJ (off) 
Input Type Standard 
Gate Charge 60nC 
Td (on/off) @ 25°C 11ns/100ns 
Test Condition 390V, 7A, 25 Ohm, 15V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-220-3 
Supplier Device Package TO-220-3 

Description

N-CH / 7A 600V SMPS 1 IGBT - IGBT 600V 34A 125W Through Hole TO-220-3

IGBT Transistors HGTP7N60A4-F102

Datasheet HGTP7N60A4-F102 (PDF)

Price (check the terms and price with the managers)
Available: 7 psc.
MOQPrice
1.66 € 
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