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HGTP5N120BND

Manufacturer: ON Semiconductor
REK ID: 80499
1.72 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 21A 
Current - Collector Pulsed (Icm) 40A 
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A 
Power - Max 167W 
Switching Energy 450µJ (on), 390µJ (off) 
Input Type Standard 
Gate Charge 53nC 
Td (on/off) @ 25°C 22ns/160ns 
Test Condition 960V, 5A, 25 Ohm, 15V 
Reverse Recovery Time (trr) 65ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-220-3 
Supplier Device Package TO-220AB 

Description

IGBT 1200V 21A 167W TO220AB - IGBT NPT 1200V 21A 167W Through Hole TO-220AB

IGBT Transistors HGTP5N120BND

Datasheet HGTP5N120BND (PDF)

Price (check the terms and price with the managers)
Available: 15 psc.
MOQPrice
1.72 € 
HGTP5N120BND
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