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HGTP3N60A4D

Manufacturer: ON Semiconductor
REK ID: 80468
1.50 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 17A 
Current - Collector Pulsed (Icm) 40A 
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A 
Power - Max 70W 
Switching Energy 37µJ (on), 25µJ (off) 
Input Type Standard 
Gate Charge 21nC 
Td (on/off) @ 25°C 6ns/73ns 
Test Condition 390V, 3A, 50 Ohm, 15V 
Reverse Recovery Time (trr) 29ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-220-3 
Supplier Device Package TO-220AB 

Description

IGBT 600V 17A 70W TO220AB - IGBT 600V 17A 70W Through Hole TO-220AB

IGBT Transistors HGTP3N60A4D

Datasheet HGTP3N60A4D (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
MOQPrice
1.50 € 
HGTP3N60A4D
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