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HGTP12N60C3D

Manufacturer: ON Semiconductor
REK ID: 80607
2.59 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 24A 
Current - Collector Pulsed (Icm) 96A 
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A 
Power - Max 104W 
Switching Energy 380µJ (on), 900µJ (off) 
Input Type Standard 
Gate Charge 48nC 
Td (on/off) @ 25°C 
Test Condition 
Reverse Recovery Time (trr) 40ns 
Operating Temperature -40°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-220-3 
Supplier Device Package TO-220AB 
Base Part Number HGTP12N60 

Description

IGBT 600V 24A 104W TO220AB - IGBT 600V 24A 104W Through Hole TO-220AB

IGBT Transistors HGTP12N60C3D

Datasheet HGTP12N60C3D (PDF)

Price (check the terms and price with the managers)
Available: 11 psc.
MOQPrice
2.59 € 
HGTP12N60C3D
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