| Manufacturer | ON Semiconductor |
| Series | - |
| Packaging | Tube |
| Part Status | Not For New Designs |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 35A |
| Current - Collector Pulsed (Icm) | 80A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 298W |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Input Type | Standard |
| Gate Charge | 100nC |
| Td (on/off) @ 25°C | 23ns/165ns |
| Test Condition | 960V, 10A, 10 Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
IGBT 1200V 35A 298W TO220AB - IGBT NPT 1200V 35A 298W Through Hole TO-220AB
IGBT Transistors HGTP10N120BN
| MOQ | Price |
|---|---|
| 1 | 1.91 € |
The manager will inform you of the total cost including delivery.