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HGTG5N120BND

Manufacturer: ON Semiconductor
REK ID: 80252
3.28 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type NPT 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 21A 
Current - Collector Pulsed (Icm) 40A 
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A 
Power - Max 167W 
Switching Energy 450µJ (on), 390µJ (off) 
Input Type Standard 
Gate Charge 53nC 
Td (on/off) @ 25°C 22ns/160ns 
Test Condition 960V, 5A, 25 Ohm, 15V 
Reverse Recovery Time (trr) 65ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 

Description

IGBT 1200V 21A 167W TO247 - IGBT NPT 1200V 21A 167W Through Hole TO-247

IGBT Transistors HGTG5N120BND

Datasheet HGTG5N120BND (PDF)

Price (check the terms and price with the managers)
Available: 1 psc.
MOQPrice
3.28 € 
10 2.94 € 
100 2.37 € 
500 1.94 € 
1,000 1.61 € 
HGTG5N120BND
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