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HGTG30N60B3D

Manufacturer: ON Semiconductor
REK ID: 80274
7.06 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Not For New Designs 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 60A 
Current - Collector Pulsed (Icm) 220A 
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A 
Power - Max 208W 
Switching Energy 550µJ (on), 680µJ (off) 
Input Type Standard 
Gate Charge 170nC 
Td (on/off) @ 25°C 36ns/137ns 
Test Condition 480V, 30A, 3 Ohm, 15V 
Reverse Recovery Time (trr) 55ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 
Base Part Number HGTG30N60 

Description

IGBT 600V 60A 208W TO247 - IGBT 600V 60A 208W Through Hole TO-247

IGBT Transistors HGTG30N60B3D

Datasheet HGTG30N60B3D (PDF)

Price (check the terms and price with the managers)
Available: 4 psc.
MOQPrice
7.06 € 
10 6.38 € 
100 5.28 € 
500 4.60 € 
1,000 4.00 € 
HGTG30N60B3D
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